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| Product Specification www.jmnic.com Silicon NPN Power Transistors BUL381 DESCRIPTION With TO-220C package High voltage capability Very high switching speed APPLICATIONS Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION LIMITING VALUES SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak (tp<5 ms) Base current Base current-Peak (tp<5 ms) Total power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 800 400 9 5 8 2 4 70 150 -65~150 ae ae UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 1.78 UNIT ae /W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Emitter-base saturation voltage Emitter-base saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=100mA; L=25mH IE=10mA; IC=0 IC=1A ;IB=0.2A IC=2A ;IB=0.4A IC=3A ;IB=0.8A IC=1A ;IB=0.2A IC=2A ;IB=0.4A VCE=800V VBE=0 Tj=125ae VCE=400V; IB=0 IC=2A ; VCE=5V IC=10mA ; VCE=5V 8 10 MIN 400 TYP. SYMBOL VCEO(SUS) VEBO VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 ICES ICEO hFE-1 hFE-2 BUL381 MAX UNIT V 0.5 0.7 1.1 1.1 1.2 100 500 |I |I 250 V V V V V A A Switching times resistive load ton ts tf Turn-on time Storage time Fall time VCC=250V ,IC=2A IB1=- IB2=0.4A tp=30|I s 1.4 1 2.2 0.8 |I |I |I s s s JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE BUL381 Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) JMnic |
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